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Schottky-emitter electron source of an Electron microscope. Electron emission that takes place in the field-and-temperature-regime where this modified equation applies is often called Schottky emission. This equation is relatively accurate for electric field strengths lower than about 10 8 V m −1.
Electron emission that takes place in the field-and-temperature-regime where this modified equation applies is often called Schottky emission. This equation is relatively accurate for electric field strengths lower than about 10 8 V⋅m −1.
Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by Φ B (see figure).
The depletion capacitance leading to Mott–Schottky plot is situated in the high frequency arc, as the depletion capacitance is a dielectric capacitance. On the other hand, the low frequency feature corresponds to the chemical capacitance of the surface states. The surface state charging produces a plateau as indicated in Fig. 1d.
In solid-state physics, the Poole–Frenkel effect (also known as Frenkel–Poole emission [1]) is a model describing the mechanism of trap-assisted electron transport in an electrical insulator. It is named after Yakov Frenkel , who published on it in 1938, [ 2 ] extending the theory previously developed by H. H. Poole.
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.
Schottky-emitter electron source of an Electron microscope. A field emission gun (FEG) is a type of electron gun in which a sharply pointed Müller-type [clarification needed] emitter [1]: 87–128 is held at several kilovolts negative potential relative to a nearby electrode, so that there is sufficient potential gradient at the emitter surface to cause field electron emission.