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Schottky-emitter electron source of an Electron microscope. Electron emission that takes place in the field-and-temperature-regime where this modified equation applies is often called Schottky emission. This equation is relatively accurate for electric field strengths lower than about 10 8 V m −1.
A Schottky barrier, named after Walter H. Schottky, is a potential energy barrier for electrons formed at a metal–semiconductor junction. Schottky barriers have rectifying characteristics, suitable for use as a diode. One of the primary characteristics of a Schottky barrier is the Schottky barrier height, denoted by Φ B (see figure).
Electron emission that takes place in the field-and-temperature-regime where this modified equation applies is often called Schottky emission. This equation is relatively accurate for electric field strengths lower than about 10 8 V⋅m −1.
The depletion capacitance leading to Mott–Schottky plot is situated in the high frequency arc, as the depletion capacitance is a dielectric capacitance. On the other hand, the low frequency feature corresponds to the chemical capacitance of the surface states. The surface state charging produces a plateau as indicated in Fig. 1d.
In physics, electron emission is the ejection of an electron from the surface of matter, [1] or, in beta decay (β− decay), where a beta particle (a fast energetic electron or positron) is emitted from an atomic nucleus transforming the original nuclide to an isobar.
The work function W for a given surface is defined by the difference [1] =, where −e is the charge of an electron, ϕ is the electrostatic potential in the vacuum nearby the surface, and E F is the Fermi level (electrochemical potential of electrons) inside the material.
Shown is the graphical definition of the Schottky barrier height, Φ B, for an n-type semiconductor as the difference between the interfacial conduction band edge E C and Fermi level E F. Whether a given metal-semiconductor junction is an ohmic contact or a Schottky barrier depends on the Schottky barrier height, Φ B, of the junction.
Schottky-emitter electron source of an Electron microscope. A field emission gun (FEG) is a type of electron gun in which a sharply pointed Müller-type [clarification needed] emitter [1]: 87–128 is held at several kilovolts negative potential relative to a nearby electrode, so that there is sufficient potential gradient at the emitter surface to cause field electron emission.