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The drain is characterized by its long length and narrow width, the cross-section of the drain is a function of the maximum flow volume anticipated from the surrounding surface. Channels can range from 1 inch (2.5 cm) to 2 feet (61 cm) in width, while depths can reach up to 4 feet (120 cm).
A diagram of a traditional French drain. A French drain [1] (also known by other names including trench drain, blind drain, [1] rubble drain, [1] and rock drain [1]) is a trench filled with gravel or rock, or both, with or without a perforated pipe that redirects surface water and groundwater away from an area.
NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]
French drain installation can solve water problems in your yard or basement. Landscaping pros explain how French drains work and what it takes to install them.
A trencher is a piece of construction equipment used to dig trenches, especially for laying pipes or electrical cables, for installing drainage, or in preparation for trench warfare. Trenchers may range in size from walk-behind models, to attachments for a skid loader or tractor, to very heavy tracked heavy equipment.
A trench is a type of excavation or depression in the ground that is generally deeper than it is wide (as opposed to a swale or a bar ditch), and narrow compared with its length (as opposed to a simple hole or pit).
Traditionally, land drains were formed in clay soils and peats by excavating a trench and forming a "tunnel" using flat stones. This was very labour-intensive but could often be done using free materials at hand. Typically they were two to three feet (600mm-900mm) below the surface.
Shallow trench isolation (STI), also known as box isolation technique, is an integrated circuit feature which prevents electric current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.
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