Search results
Results from the WOW.Com Content Network
The bipolar junction transistor, the first type of transistor to be mass-produced, is a combination of two junction diodes and is formed of either a thin layer of p-type semiconductor sandwiched between two n-type semiconductors (an n–p–n transistor), or a thin layer of n-type semiconductor sandwiched between two p-type semiconductors (a p ...
Bipolar transistors, and particularly power transistors, have long base-storage times when they are driven into saturation; the base storage limits turn-off time in switching applications. A Baker clamp can prevent the transistor from heavily saturating, which reduces the amount of charge stored in the base and thus improves switching time.
First edition. Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, [1] first published in 1950. . It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transis
The common base current gain (or α) of a point-contact transistor is usually around 2 to 3, [4] whereas α of bipolar junction transistor (BJT) cannot exceed 1. The common emitter current gain (or β) of a point-contact transistor does not usually exceed 1, [4] whereas β of a BJT is typically between 20 and 200. Negative differential ...
The width and thickness of the interconnect, as well as the material from which it is made, are some of the significant factors that determine the distance a signal may propagate. Local interconnects connect circuit elements that are very close together, such as transistors separated by ten or so other contiguously laid out transistors.
The first working transistor was a point-contact transistor invented by John Bardeen, Walter Houser Brattain, and William Shockley at Bell Labs in 1947. Shockley had earlier theorized a field-effect amplifier made from germanium and silicon, but he failed to build such a working device, before eventually using germanium to invent the point ...
Schematic diagram of a single-electron transistor Left to right: energy levels of source, island and drain in a single-electron transistor for the blocking state (upper part) and transmitting state (lower part). The SET has, like the FET, three electrodes: source, drain, and a gate. The main technological difference between the transistor types ...
The use of the metal–semiconductor diode rectifier was proposed by Lilienfeld in 1926 in the first of his three transistor patents as the gate of the metal–semiconductor field effect transistors. [11] The theory of the field-effect transistor using a metal/semiconductor gate was advanced by William Shockley in 1939.