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The collector–emitter current can be viewed as being controlled by the base–emitter current (current control), or by the base–emitter voltage (voltage control). These views are related by the current–voltage relation of the base–emitter junction, which is the usual exponential current–voltage curve of a p–n junction (diode).
A load line diagram, illustrating an operating point in the transistor's active region.. Biasing is the setting of the DC operating point of an electronic component. For bipolar junction transistors (BJTs), the operating point is defined as the steady-state DC collector-emitter voltage and the collector current with no input signal applied.
The reverse bias safe operating area (or RBSOA) is the SOA during the brief time before turning the device into the off state—during the short time when the base current bias is reversed. As long as the collector voltage and collector current stay within the RBSOA during the entire turnoff, the transistor will be undamaged.
The standard two-diode Baker clamp circuit, which includes the feedback current I 1 that reduces the base current I b Baker clamp alternative in a Schottky transistor. The Baker clamp is named after Richard H. Baker, who described it in his 1956 technical report "Maximum Efficiency Transistor Switching Circuits". [2]
Full hybrid-pi model. The full model introduces the virtual terminal, B′, so that the base spreading resistance, r bb, (the bulk resistance between the base contact and the active region of the base under the emitter) and r b′e (representing the base current required to make up for recombination of minority carriers in the base region) can be represented separately.
The narrowing of the collector does not have a significant effect as the collector is much longer than the base. The emitter–base junction is unchanged because the emitter–base voltage is the same. Base-narrowing has two consequences that affect the current: There is a lesser chance for recombination within the "smaller" base region.
Generally, BJTs are not utilized in power electronics switching circuits because of the I 2 R losses associated with on resistance and base current requirements. [19] BJTs have lower current gains in high power packages, thus requiring them to be set up in Darlington configurations in order to handle the currents required by power electronic ...
The junction version known as the bipolar junction transistor (BJT), invented by Shockley in 1948. [10] Later the similar thyristor was proposed by William Shockley in 1950 and developed in 1956 by power engineers at General Electric (GE). The metal–oxide–semiconductor field-effect transistor (MOSFET) was also invented at Bell Labs.