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List of free analog and digital electronic circuit simulators, available for Windows, macOS, Linux, and comparing against UC Berkeley SPICE. The following table is split into two groups based on whether it has a graphical visual interface or not.
Quite Universal Circuit Simulator (Qucs) is a free-software electronics circuit simulator software application released under GPL. It offers the ability to set up a circuit with a graphical user interface and simulate the large-signal, small-signal and noise behaviour of the circuit.
An N-MOSFET/IGBT needs a significantly positive charge (V GS > V th) applied to the gate in order to turn on. Using only N-channel MOSFET/IGBT devices is a common cost reduction method due largely to die size reduction (there are other benefits as well). However, using nMOS devices in place of pMOS devices means that a voltage higher than the ...
The first Windows version was released in 1993 as TINA 4.0 for analog, digital, and mixed circuits. [3] TINA 9.0 also includes microcontroller (MCU) simulation, RF network analysis, optimization, and printed circuit board design. [2] TINA development was at version 10, released in 2013, and is at major version 11 since 2016. [4]
The latest stable version is 0.35 from 2006. The latest development snapshot (as of July 2023) is from June 2023 and is usable. It performs nonlinear DC and transient analysis, Fourier analysis, and AC analysis linearized at an operating point. [4] It is fully interactive and command driven. It can also be run in batch mode or as a server.
The development of MOOSE at Idaho National Laboratory (INL) since May 2008, has resulted in a unique approach to computational engineering that combines computer science with a strong underlying mathematical description in a unique way that allows scientists and engineers to develop engineering simulation tools in a fraction of the time previously required. [2]
Overdrive voltage, usually abbreviated as V OV, is typically referred to in the context of MOSFET transistors.The overdrive voltage is defined as the voltage between transistor gate and source (V GS) in excess of the threshold voltage (V TH) where V TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity).
BSIM (Berkeley Short-channel IGFET Model) [1] refers to a family of MOSFET transistor models for integrated circuit design. It also refers to the BSIM group located in the Department of Electrical Engineering and Computer Sciences (EECS) at the University of California, Berkeley, that develops these models.