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Avalanche photodiodes are photodiodes with structure optimized for operating with high reverse bias, approaching the reverse breakdown voltage. This allows each photo-generated carrier to be multiplied by avalanche breakdown, resulting in internal gain within the photodiode, which increases the effective responsivity of the device. [5]
The silicon avalanche photodiode is a high-gain photon detector. They are "ideal for use in high-speed, low-light-level applications". [3] The avalanche photodiode is operated with a reverse bias voltage of up to hundreds of volts, slightly below its breakdown voltage.
Transimpedance amplifier with a reverse-biased photodiode. In the circuit shown in figure 1 the photodiode (shown as a current source) is connected between ground and the inverting input of the op-amp. The other input of the op-amp is also connected to ground. This provides a low-impedance load for the photodiode, which keeps the photodiode ...
An avalanche photodiode (APD) is a highly sensitive type of photodiode, ... Since APD gain varies strongly with the applied reverse bias and temperature, it is ...
The PIN photodiode was invented by Jun-ichi Nishizawa and his colleagues in 1950. [4] PIN photodiodes are used in fibre optic network cards and switches. As a photodetector, the PIN diode is reverse-biased. Under reverse bias, the diode ordinarily does not conduct (save a small dark current or I s leakage).
When operated with a low reverse bias voltage, the p-n junction can operate as a unity gain photodiode. As the reverse bias increases, some internal gain through carrier multiplication can occur allowing the photodiode to operate as an avalanche photodiode (APD) with a stable gain and a linear response to the optical input signal. However, as ...
A normally-bound electron (e.g., in a bond) in a reverse-biased diode may break loose due to a thermal fluctuation or excitation, creating a mobile electron-hole pair . If there is a voltage gradient (electric field) in the semiconductor, then the electron will move towards the positive voltage while the hole will move towards the negative voltage.
It is referred to as reverse bias leakage current in non-optical devices and is present in all diodes. Physically, dark current is due to the random generation of electrons and holes within the depletion region of the device. [1] Dark current is one of the main sources for noise in image sensors such as charge-coupled devices.