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Diffusion current is a current in a semiconductor caused by the diffusion of charge carriers (electrons and/or electron holes). This is the current which is due to the transport of charges occurring because of non-uniform concentration of charged particles in a semiconductor.
If the device is unconnected (or the external load is very high) then diffusion current would eventually restore the equilibrium charge by bringing the electron and hole back across the junction, but if the load connected is small enough, the electrons prefer to go around the external circuit in their attempt to restore equilibrium, doing ...
This process generates current, referred to as diffusion current. Diffusion current can also be described by Fick's first law = /, where J is the diffusion current density (amount of substance) per unit area per unit time, n (for ideal mixtures) is the electron density, x is the position [length].
Fick's first law relates the diffusive flux to the gradient of the concentration. It postulates that the flux goes from regions of high concentration to regions of low concentration, with a magnitude that is proportional to the concentration gradient (spatial derivative), or in simplistic terms the concept that a solute will move from a region of high concentration to a region of low ...
That is, the current is said to be "diffusion controlled". The Cottrell equation describes the case for an electrode that is planar but can also be derived for spherical, cylindrical, and rectangular geometries by using the corresponding Laplace operator and boundary conditions in conjunction with Fick's second law of diffusion. [2]
The total current (the sum of the electron and hole currents) is constant in space, because any variation would cause charge buildup over time (this is Kirchhoff's current law). The flow of holes from the p-type region into the n-type region is exactly analogous to the flow of electrons from N to P (electrons and holes swap roles and the signs ...
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This diffusion current is governed by Fick's law: = where: F is flux. D e is the diffusion coefficient or diffusivity; is the concentration gradient of electrons; The diffusion coefficient for a charge carrier is related to its mobility by the Einstein relation.