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  2. Band offset - Wikipedia

    en.wikipedia.org/wiki/Band_offset

    This relative alignment of the energy bands at such semiconductor heterojunctions is called the Band offset. The band offsets can be determined by both intrinsic properties, that is, determined by properties of the bulk materials, as well as non-intrinsic properties, namely, specific properties of the interface.

  3. List of semiconductor scale examples - Wikipedia

    en.wikipedia.org/wiki/List_of_semiconductor...

    Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations

  4. Anderson's rule - Wikipedia

    en.wikipedia.org/wiki/Anderson's_rule

    For semiconductor alloys it may be necessary to use Vegard's law to calculate these values. Once the relative positions of the conduction and valence bands for both semiconductors are known, Anderson's rule allows the calculation of the band offsets of both the valence band ( Δ E v {\displaystyle \Delta E_{\rm {v}}} ) and the conduction band ...

  5. MOSFET - Wikipedia

    en.wikipedia.org/wiki/MOSFET

    This can be seen on a band diagram. The Fermi level defines the type of semiconductor in discussion. If the Fermi level is equal to the Intrinsic level, the semiconductor is of intrinsic, or pure type. If the Fermi level lies closer to the conduction band (valence band) then the semiconductor type will be of n-type (p-type).

  6. 1N400x rectifier diode - Wikipedia

    en.wikipedia.org/wiki/1N400x_rectifier_diode

    The 1N400x (or 1N4001 or 1N4000 [1]) series is a family of popular one-ampere general-purpose silicon rectifier diodes commonly used in AC adapters for common household appliances. Its blocking voltage varies from 50 volts (1N4001) to 1000 volts (1N4007).

  7. Band bending - Wikipedia

    en.wikipedia.org/wiki/Band_bending

    As a result no band bending occurs. If the semiconductor is doped, the Fermi level of the bulk is shifted with respect to that of the undoped semiconductor by the introduction of dopant eigenstates within the band gap. It is shifted up for n-doped semiconductors (closer to the conduction band) and down in case of p-doping (nearing the valence ...

  8. Semiconductor characterization techniques - Wikipedia

    en.wikipedia.org/wiki/Semiconductor...

    Semiconductor characterization techniques are used to characterize a semiconductor material or device (p–n junction, Schottky diode, solar cell, etc.).Some examples of semiconductor properties that could be characterized include the depletion width, carrier concentration, carrier generation and recombination rates, carrier lifetimes, defect concentration, and trap states.

  9. Electronic circuit - Wikipedia

    en.wikipedia.org/wiki/Electronic_circuit

    In an integrated circuit or IC, the components and interconnections are formed on the same substrate, typically a semiconductor such as doped silicon or (less commonly) gallium arsenide. [ 2 ] An electronic circuit can usually be categorized as an analog circuit , a digital circuit , or a mixed-signal circuit (a combination of analog circuits ...