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As channel length decreases, the barrier φ B to be surmounted by an electron from the source on its way to the drain reduces. Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.
To combat drain-induced barrier lowering (DIBL), MOSFET substrate near source and drain region are heavily doped (p+ in case of NMOS and n+ in case of PMOS) to reduce the width of the depletion region in the vicinity of source/substrate and drain/substrate junctions (called halo doping to describe the limitation of this heavy doping to the ...
In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. [1] [2]
In shorter MOSFETs additional factors arise such as: drain-induced barrier lowering (which lowers the threshold voltage, increasing the current and decreasing the output resistance), velocity saturation (which tends to limit the increase in channel current with drain voltage, thereby increasing the output resistance) and ballistic transport ...
The drain induced barrier lowering of the threshold voltage and channel length modulation effects upon I-V curves are reduced by using shallow junction extensions. In addition, halo doping can be used, that is, the addition of very thin heavily doped regions of the same doping type as the body tight against the junction walls to limit the ...
In the subthreshold region, the drain current behaviour—though being controlled by the gate terminal—is similar to the exponentially decreasing current of a forward biased diode. Therefore, a plot of drain current versus gate voltage with drain, source , and bulk voltages fixed will exhibit approximately log-linear behaviour in this MOSFET ...
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In brief, a high voltage is placed between the control gate while a medium-high voltage is applied on the source and the drain while a current is induced from the source to the drain. Those electrons that have gained sufficient energy in traversing through the high-field region near the drain will boil off from the channel to be injected into ...