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Gallium(III) oxide is an inorganic compound and ultra-wide-bandgap semiconductor with the formula Ga 2 O 3. It is actively studied for applications in power electronics , phosphors , and gas sensing .
At room temperature, gallium metal is not reactive with air and water because it forms a passive, protective oxide layer. At higher temperatures, however, it reacts with atmospheric oxygen to form gallium(III) oxide, Ga 2 O 3. [4] Reducing Ga 2 O 3 with elemental gallium in vacuum at 500 °C to 700 °C yields the dark brown gallium(I) oxide, Ga ...
Gallium oxide may refer to Gallium(I) oxide, Ga 2 O; Gallium(III) oxide, Ga 2 O 3 This page was last edited on 8 September 2020, at 13:36 (UTC). Text is available ...
A 2-inch diameter gallium oxide wafer is pictured at the Hangzhou International Science and Innovation Center of Zhejiang University in Hangzhou, Zhejiang province, China, on May 30, 2022.
Gallium(I) oxide is a brown-black diamagnetic solid which is resistant to further oxidation in dry air. It starts decomposing upon heating at temperatures above 500 °C, and the decomposition rate depends on the atmosphere (vacuum, inert gas, air).
Galinstan is a brand name for an alloy composed of gallium, indium, and tin which melts at −19 °C (−2 °F) and is thus liquid at room temperature. [4] [5] In scientific literature, galinstan is also used to denote the eutectic alloy of gallium, indium, and tin, which melts at around +11 °C (52 °F). [5]
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At higher temperatures, however, it reacts with atmospheric oxygen to form gallium(III) oxide, Ga 2 O 3. [34] Reducing Ga 2 O 3 with elemental gallium in vacuum at 500 °C to 700 °C yields the dark brown gallium(I) oxide, Ga 2 O. [33]: 285 Ga 2 O is a very strong reducing agent, capable of reducing H 2 SO 4 to H 2 S.