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Gallium arsenide was first synthesized and studied by Victor Goldschmidt in 1926 by passing arsenic vapors mixed with hydrogen over gallium(III) oxide at 600 °C. [7] [8] The semiconductor properties of GaAs and other III-V compounds were patented by Heinrich Welker at Siemens-Schuckert in 1951 [9] and described in a 1952 publication. [10]
A compound semiconductor is a semiconductor compound composed of chemical elements of at least two different species. These semiconductors form for example in periodic table groups 13–15 (old groups III–V), for example of elements from the Boron group (old group III, boron, aluminium, gallium, indium) and from group 15 (old group V, nitrogen, phosphorus, arsenic, antimony, bismuth).
Common third-generation systems include multi-layer ("tandem") cells made of amorphous silicon or gallium arsenide, while more theoretical developments include frequency conversion, (i.e. changing the frequencies of light that the cell cannot use to light frequencies that the cell can use - thus producing more power), hot-carrier effects and ...
Wide-bandgap semiconductors permit devices to operate at much higher voltages, frequencies, and temperatures than conventional semiconductor materials like silicon and gallium arsenide. They are the key component used to make short-wavelength (green-UV) LEDs or lasers , and are also used in certain radio frequency applications, notably military ...
The Czochralski method, also Czochralski technique or Czochralski process, is a method of crystal growth used to obtain single crystals of semiconductors (e.g. silicon, germanium and gallium arsenide), metals (e.g. palladium, platinum, silver, gold), salts and synthetic gemstones.
Thin-film solar cells, a second generation of photovoltaic (PV) solar cells: Top: thin-film silicon laminates being installed onto a roof. Middle: CIGS solar cell on a flexible plastic backing and rigid CdTe panels mounted on a supporting structure Bottom: thin-film laminates on rooftops Thin-film solar cells are a type of solar cell made by depositing one or more thin layers (thin films or ...
Indium gallium arsenide (In 0.53 Ga 0.47 As) is lattice matched to Indium Phosphide with a band gap of 0.74 eV. A quaternary alloy of indium gallium arsenide phosphide can be lattice matched for any band gap in between the two. [citation needed] Indium phosphide-based cells have the potential to work in tandem with gallium arsenide cells.
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).