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Edwards Vacuum will be producing cryogenic pumping systems that are critical to the production of semiconductor chips and are contributing to a growing digital society.
The firm was rebranded W Edwards and Co in 1940, then Edwards High Vacuum International Ltd in 1950, and moved from London to Crawley in 1953. [ 2 ] [ 18 ] [ 3 ] [ 19 ] Edwards purchased Italian freeze-drying equipment manufacturer Alto Vuoto SpA in 1954, followed by the Shoreham factory of former subcontractor J H Holmes and Son Ltd in 1958.
Edwards has over 3,200 full-time employees and 500 temporary workers operating in approximately 30 countries worldwide engaged in the design, manufacture and support of high technology vacuum and ...
Atlas Copco's Vacuum Technique business area provides vacuum products, exhaust management systems, valves and related products mainly under the Edwards, Leybold and Atlas Copco brands. The main markets served are semiconductors , chemical processing industries , food packaging and paper handling.
In the field of oil regeneration and re-refining, vacuum pumps create a low vacuum for oil dehydration and a high vacuum for oil purification. [44] A vacuum may be used to power, or provide assistance to mechanical devices. In hybrid and diesel engine motor vehicles, a pump fitted on the engine (usually on the camshaft) is used to produce a vacuum.
Molecular-beam epitaxy takes place in high vacuum or ultra-high vacuum (10 −8 –10 −12 Torr).The most important aspect of an MBE process is the deposition rate (typically less than 3,000 nm per hour) that allows the films to grow epitaxially (in layers on top of the existing crystal).
Thin-film deposition is a process applied in the semiconductor industry to grow electronic materials, in the aerospace industry to form thermal and chemical barrier coatings to protect surfaces against corrosive environments, in optics to impart the desired reflective and transmissive properties to a substrate and elsewhere in industry to modify surfaces to have a variety of desired properties.
It is a process for growing crystalline layers to create complex semiconductor multilayer structures. [2] In contrast to molecular-beam epitaxy (MBE), the growth of crystals is by chemical reaction and not physical deposition. This takes place not in vacuum, but from the gas phase at moderate pressures (10 to 760 Torr).
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