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The Shockley equation is a constant current (steady state) relationship, and thus doesn't account for the diode's transient response, which includes the influence of its internal junction and diffusion capacitance and reverse recovery time.
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
From the Shockley ideal diode equation given above, it might appear that the voltage has a positive temperature coefficient (at a constant current), but usually the variation of the reverse saturation current term is more significant than the variation in the thermal voltage term.
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
Figure 1. Top: NPN base width for low collector–base reverse bias; Bottom: narrower NPN base width for large collector–base reverse bias. Hashed areas are depleted regions. 2. The Early voltage (V A) as seen in the output-characteristic plot of a BJT. The Early effect, named after its discoverer James M.
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