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The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The Shockley equation is a constant current (steady state) relationship, and thus doesn't account for the diode's transient response, which includes the influence of its internal junction and diffusion capacitance and reverse recovery time.
From the Shockley ideal diode equation given above, it might appear that the voltage has a positive temperature coefficient (at a constant current), but usually the variation of the reverse saturation current term is more significant than the variation in the thermal voltage term.
First edition. Electrons and Holes in Semiconductors with Applications to Transistor Electronics is a book by Nobel Prize winner William Shockley, [1] first published in 1950. . It was a primary source, and was used as the first textbook, for scientists and engineers learning the new field of semiconductors as applied to the development of the transis
The saturation current (or scale current), more accurately the reverse saturation current, is the part of the reverse current in a semiconductor diode caused by diffusion of minority carriers from the neutral regions to the depletion region. This current is almost independent of the reverse voltage.
Designers must rely on a diode's specification sheet, which primarily provides a maximum forward voltage drop at one or more forward currents, a reverse leakage current (or saturation current), and a maximum reverse voltage limited by Zener or avalanche breakdown. Effects of temperature and process variation are usually included. Typical examples:
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In Shockley-Read-Hall recombination (SRH), also called trap-assisted recombination, the electron in transition between bands passes through a new energy state (localized state) created within the band gap by a dopant or a defect in the crystal lattice; such energy states are called traps. Non-radiative recombination occurs primarily at such sites.
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