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Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
nvSRAM is a type of non-volatile random-access memory (NVRAM). [1] [2] nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an EEPROM to the SRAM chip. In operation, data is written to and read from the SRAM portion with high-speed access; the data in SRAM can then be stored into or retrieved from the non ...
Flash memory is an electronic non-volatile computer memory storage medium that can be electrically erased and reprogrammed. The two main types of flash memory, NOR flash and NAND flash, are named for the NOR and NAND logic gates. Both use the same cell design, consisting of floating-gate MOSFETs. They differ at the circuit level depending on ...
Phase-change memory stores data in chalcogenide glass, which can reversibly change the phase between the amorphous and the crystalline state, accomplished by heating and cooling the glass. The crystalline state has low resistance, and the amorphous phase has high resistance, which allows currents to be switched ON and OFF to represent digital 1 ...
Flash memory is produced using semiconductor linewidths of 30 nm at Samsung (2007) while FeRAMs are produced in linewidths of 350 nm at Fujitsu and 130 nm at Texas Instruments (2007). Flash memory cells can store multiple bits per cell (currently 4 in the highest density NAND flash devices), and the number of bits per flash cell is projected to ...
It is referred to as non-volatile memory or NVRAM because, after the system loses power, it does retain state by virtue of the CMOS battery. When the battery fails, BIOS settings are reset to their defaults. The battery can also be used to power a real time clock (RTC) and the RTC, NVRAM and battery may be integrated into a single component.
The differences compared to flash are far more significant, with write speeds as much as thousands of times faster. However, these speed comparisons are not for like-for-like current. High-density memory requires small transistors with reduced current, especially when built for low standby leakage.
Flash memory – In this type the writing process is intermediate in speed between EEPROMS and RAM memory; it can be written to, but not fast enough to serve as main memory. It is often used as a semiconductor version of a hard disk , to store files.