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The federal telephone excise tax is a statutory federal excise tax imposed under the Internal Revenue Code in the United States under 26 U.S.C. § 4251 on amounts paid for certain "communications services". The tax was to be imposed on the person paying for the communications services (such as a customer of a telephone company) but, under 26 U ...
Fuel. Federal excise taxes have been stable at 18.4¢ per gallon for gasoline and 24.4¢ per gallon for diesel fuel since 1993. This raised $37.4 billion in fiscal year 2015. These fuel taxes raised 90% of the Highway Trust Fund. The average of state taxes on fuel was 31.02¢ per gallon for gasoline and 32.66¢ per gallon for diesel fuel in 2021.
Extremely little current flows below this voltage. The threshold voltage, commonly abbreviated as V th or V GS (th), of a field-effect transistor (FET) is the minimum gate-to-source voltage (V GS) that is needed to create a conducting path between the source and drain terminals. It is an important scaling factor to maintain power efficiency.
Carbon nanotube field-effect transistor. A carbon nanotube field-effect transistor (CNTFET) is a field-effect transistor that utilizes a single carbon nanotube (CNT) or an array of carbon nanotubes as the channel material, instead of bulk silicon, as in the traditional MOSFET structure. There have been major developments since CNTFETs were ...
Being exempt from federal withholding means your employer will not withhold federal income tax from your paycheck. When you claim certain deductions, they get subtracted from your annual gross ...
The mode can be determined by the sign of the threshold voltage (gate voltage relative to source voltage at the point where an inversion layer just forms in the channel): for an N-type FET, enhancement-mode devices have positive thresholds, and depletion-mode devices have negative thresholds; for a P-type FET, enhancement-mode have negative ...
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
Fin field-effect transistor. A fin field-effect transistor (FinFET) is a multigate device, a MOSFET (metal–oxide–semiconductor field-effect transistor) built on a substrate where the gate is placed on two, three, or four sides of the channel or wrapped around the channel (gate all around), forming a double or even multi gate structure.
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