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  2. Fermi level - Wikipedia

    en.wikipedia.org/wiki/Fermi_level

    The Fermi level does not necessarily correspond to an actual energy level (in an insulator the Fermi level lies in the band gap), nor does it require the existence of a band structure. Nonetheless, the Fermi level is a precisely defined thermodynamic quantity, and differences in Fermi level can be measured simply with a voltmeter.

  3. Quasi Fermi level - Wikipedia

    en.wikipedia.org/wiki/Quasi_Fermi_level

    When a semiconductor is in thermal equilibrium, the distribution function of the electrons at the energy level of E is presented by a Fermi–Dirac distribution function. In this case the Fermi level is defined as the level in which the probability of occupation of electron at that energy is 1 ⁄ 2.

  4. Electronic band structure - Wikipedia

    en.wikipedia.org/wiki/Electronic_band_structure

    µ is the total chemical potential of electrons, or Fermi level (in semiconductor physics, this quantity is more often denoted E F). The Fermi level of a solid is directly related to the voltage on that solid, as measured with a voltmeter. Conventionally, in band structure plots the Fermi level is taken to be the zero of energy (an arbitrary ...

  5. Moss–Burstein effect - Wikipedia

    en.wikipedia.org/wiki/Moss–Burstein_effect

    The effect occurs when the electron carrier concentration exceeds the conduction band edge density of states, which corresponds to degenerate doping in semiconductors. In nominally doped semiconductors, the Fermi level lies between the conduction and valence bands. For example, in n-doped semiconductor, as the doping concentration is increased ...

  6. Metal–semiconductor junction - Wikipedia

    en.wikipedia.org/wiki/Metal–semiconductor_junction

    The Fermi level pinning effect is strong in many commercially important semiconductors (Si, Ge, GaAs), [5] and thus can be problematic for the design of semiconductor devices. For example, nearly all metals form a significant Schottky barrier to n -type germanium and an ohmic contact to p -type germanium, since the valence band edge is strongly ...

  7. Band diagram - Wikipedia

    en.wikipedia.org/wiki/Band_diagram

    E i: The intrinsic Fermi level may be included in a semiconductor, to show where the Fermi level would have to be for the material to be neutrally doped (i.e., an equal number of mobile electrons and holes). E imp: Impurity energy level. Many defects and dopants add states inside the band gap of a semiconductor or insulator. It can be useful to ...

  8. Density of states - Wikipedia

    en.wikipedia.org/wiki/Density_of_states

    If then the Fermi level lies in an occupied band gap between the highest occupied state and the lowest empty state, the material will be an insulator or semiconductor. Depending on the quantum mechanical system, the density of states can be calculated for electrons , photons , or phonons , and can be given as a function of either energy or the ...

  9. Field effect (semiconductor) - Wikipedia

    en.wikipedia.org/wiki/Field_effect_(semiconductor)

    The example in the figure shows the Fermi level in the bulk material beyond the range of the applied field as lying close to the valence band edge. This position for the occupancy level is arranged by introducing impurities into the semiconductor.