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Ion milling is a specialized physical etching technique that is a crucial step in the preparation of material analysis techniques. After a specimen goes through ion milling, the surface becomes much smoother and more defined, which allows scientists to study the material much easier.
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching . RIE uses chemically reactive plasma to remove material deposited on wafers .
Because the etching is performed by ions, which approach the wafer approximately from one direction, this process is highly anisotropic. On the other hand, it tends to display poor selectivity. Reactive-ion etching (RIE) operates under conditions intermediate between sputter and plasma etching (between 10 −3 and 10 −1 Torr).
Another ion source seen in commercially available instruments is a helium ion source, which is inherently less damaging to the sample than Ga ions although it will still sputter small amounts of material especially at high magnifications and long scan times. As helium ions can be focused into a small probe size and provide a much smaller sample ...
Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios .
Ion beams can be used for material modification (e.g. by sputtering or ion beam etching) and for ion beam analysis. Ion beam application, etching, or sputtering, is a technique conceptually similar to sandblasting , but using individual atoms in an ion beam to ablate a target.
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In 2010, the institute had around 150 employees. The scientists continued to conduct research in the fields of ion, plasma, electron and photon interaction with surfaces and thin films. [10] The "Ion Beam Technology" department was renamed the "Physics Department" and headed by Prof Rauschenbach, who remained Director of the Institute.
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