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Advances in thin film deposition techniques during the 20th century have enabled a wide range of technological breakthroughs in areas such as magnetic recording media, electronic semiconductor devices, integrated passive devices, light-emitting diodes, optical coatings (such as antireflective coatings), hard coatings on cutting tools, and for ...
A thin-film transistor (TFT) is a special type of field-effect transistor (FET) where the transistor is made by thin film deposition. TFTs are grown on a supporting (but non-conducting) substrate , such as glass .
However, CNT thin films show many advantages over other transparent electrodes in the IR range. CNT thin films were reported to have a transmittance of over 90% in this range (400 nm – 22 μm). This paves the way for new applications, indicating that CNT thin films can be used as heat dissipaters in solar cells because of this high transmittance.
These precursors react with the surface of a material one at a time in a sequential, self-limiting, manner. A thin film is slowly deposited through repeated exposure to separate precursors. ALD is a key process in fabricating semiconductor devices, and part of the set of tools for synthesizing nanomaterials.
Thin-film deposition is a process applied in the semiconductor industry to grow electronic materials, in the aerospace industry to form thermal and chemical barrier coatings to protect surfaces against corrosive environments, in optics to impart the desired reflective and transmissive properties to a substrate and elsewhere in industry to modify surfaces to have a variety of desired properties.
It is a p-type semiconductor whose electrical properties can be tailored by doping and structural modification and has emerged as one of the simple, non-toxic and affordable material for thin films solar cells since a decade. IV-VI: 2: Tin(IV) sulfide: SnS 2: 2.2 [24] SnS 2 is widely used in gas sensing applications. IV-VI: 2: Tin telluride ...
An oxide thin-film transistor (oxide TFT) or metal oxide thin film transistor is a type of thin film transistor where the semiconductor is a metal oxide compound. An oxide TFT is distinct from a metal oxide field effect transistor ( MOSFET ) where the word "oxide" refers to the insulating gate dielectric (normally silicon dioxide ).
Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors. [1] MBE is used to make diodes and MOSFETs (MOS field-effect transistors) at microwave frequencies, and to manufacture the lasers used to read optical discs (such ...
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