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Post-alloy diffused transistor (PADT) – high-speed type of alloy junction transistor, speedier than MAT, a diffused-base transistor. Developed at Philips. Tetrode transistor – high-speed variant of grown-junction transistor [18] or alloy junction transistor [19] with two connections to base.
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
Darlington Transistor (NPN-type) In electronics, a Darlington configuration (commonly called as a Darlington pair) is a circuit consisting of two bipolar transistors with the emitter of one transistor connected to the base of the other, such that the current amplified by the first transistor is amplified further by the second one. [1]
An IGBT cell is constructed similarly to an n-channel vertical-construction power MOSFET, except the n+ drain is replaced with a p+ collector layer, thus forming a vertical PNP bipolar junction transistor. This additional p+ region creates a cascade connection of a PNP bipolar junction transistor with the surface n-channel MOSFET. The whole ...
A single common-emitter pnp-type transistor can operate correctly in saturation mode, with only ≈0.25 V voltage drop, but also with impractically high base currents. [29] A compound pnp-type transistor does not need as much drive current, but it requires at least a 1 V voltage drop. [29]
Size comparison of BJT transistor packages, from left to right: SOT-23, TO-92, TO-126, TO-3. The case is molded around the transistor elements in two parts; the face is flat, usually bearing a machine-printed part number (some early examples had the part number printed on the top surface instead). The back is semi-circularly-shaped.
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