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The 65 nm process is an advanced lithographic node used in volume CMOS semiconductor fabrication. Printed linewidths (i.e. transistor gate lengths) can reach as low as 25 nm on a nominally 65 nm process, while the pitch between two lines may be greater than 130 nm.
The technology used a 32 nm SOI process, two CPU cores per module, and up to four modules, ranging from a quad-core design costing approximately US$130 to a $280 eight-core design. Ambarella Inc. announced the availability of the A7L system-on-a-chip circuit for digital still cameras, providing 1080p60 high-definition video capabilities in ...
35 nm gate length (same as 65 nm generation) 1 nm equivalent oxide thickness, with 0.7 nm transition layer; Gate-last process using dummy polysilicon and damascene metal gate; Squaring of gate ends using a second photoresist coating [10] 9 layers of carbon-doped oxide and Cu interconnect, the last being a thick "redistribution" layer
65 nm CMOS process; manufactured at TSMC [6] 32 KB L1 instruction cache, 16 KB L1 data cache, 512 KB L2 cache; System-on-a-chip (SoC) including a PCI controller, Ethernet 1000/100/10 Mbit/s, USB 2.0, I²C, SPI, CAN 2.0, SATA 3.0; power consumption 7 W, temperature range -60 °C to +85 °C
The POWER6 has approximately 790 million transistors and is 341 mm 2 large fabricated on a 65 nm process. A notable difference from POWER5 is that the POWER6 executes instructions in-order instead of out-of-order. This change often requires software to be recompiled for optimal performance, but the POWER6 still achieves significant performance ...
The reduction to 65 nm reduced the existing 230 mm 2 die based on the 90 nm process to half its current size, about 120 mm 2, greatly reducing IBM's manufacturing cost as well. On 12 March 2007, IBM announced that it started producing 65 nm Cells in its East Fishkill fab. The chips produced there are apparently only for IBMs own Cell blade ...
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The 90 nm process refers to the technology used in semiconductor manufacturing to create integrated circuits with a minimum feature size of 90 nanometers. It was an advancement over the previous 130 nm process. Eventually, it was succeeded by smaller process nodes, such as the 65 nm, 45 nm, and 32 nm processes.