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The 2N3904 is a common NPN bipolar junction transistor used for general-purpose low-power amplifying or switching applications. [1] [2] [3] It is designed for low current and power, medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3906 PNP transistor. Both types were registered by Motorola Semiconductor in ...
Sample-and-hold integrated circuit (Tesla MAC198) in a reduced-height TO-99 package. The TO-78, [13] TO-79, [14] TO-80, [15] and TO-99 [16] packages have 8 leads (up to three of those may be omitted). The minimum angle between two adjacent leads is 45°. These packages differ from other variants in the height of the cap.
The 2N7000 is housed in a TO92 package, with lead 1 connected as the source, lead 2 as the gate, and lead 3 as the drain. The BS170 has the source and drain leads interchanged. The 2N7002 variant is packaged in a TO-236 surface-mount package. The 2N7000 is an N-channel, enhancement-mode MOSFET used for low-power switching applications. [1]
For example, a metric 2520 component is 2.5 mm by 2.0 mm which corresponds roughly to 0.10 inches by 0.08 inches (hence, imperial size is 1008). Exceptions occur for imperial in the two smallest rectangular passive sizes. The metric codes still represent the dimensions in mm, even though the imperial size codes are no longer aligned.
The 2N3906 is a commonly used PNP bipolar junction transistor intended for general purpose low-power amplifying or switching applications. [1] [2] It is designed for low electric current and power and medium voltage, and can operate at moderately high speeds. It is complementary to the 2N3904 NPN transistor. [3]
The 2N3055 is a silicon NPN power transistor intended for general purpose applications. It was introduced in the early 1960s by RCA using a hometaxial power transistor process, transitioned to an epitaxial base in the mid-1970s. [1] Its numbering follows the JEDEC standard. [2] It is a transistor type of enduring popularity. [3] [4] [5]
A transistor is a semiconductor device used to amplify and switch electronic signals and electrical power. Field-effect transistors (FET) MOSFET (metal–oxide–semiconductor FET) – by far the most widely manufactured electronic component (also known as MOS transistor) [ 6 ] [ 7 ]
It is a 0.6-ampere, 60-volt, 400-milliwatt transistor. Its transition frequency f T (where the current gain drops to one) under specified test conditions is 200 Megahertz. At low frequencies, the current gain (beta) is at least 100. The 2N2907 is used in a variety of analog amplification and switching applications.