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Plasma-enhanced chemical vapor deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases.
Plasma (argon-only on the left, argon and silane on the right) inside a prototype LEPECVD reactor at the LNESS laboratory in Como, Italy. Low-energy plasma-enhanced chemical vapor deposition (LEPECVD) is a plasma-enhanced chemical vapor deposition technique used for the epitaxial deposition of thin semiconductor (silicon, germanium and SiGe ...
DC plasma (violet) enhances the growth of carbon nanotubes in a laboratory-scale PECVD (plasma-enhanced chemical vapor deposition) apparatus. Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high-quality, and high-performance, solid materials.
Chemical Vapor Deposition is a chemical deposition process in which the wafer is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired film. Within Chemical Vapor Deposition (CVD) ASM offers two types of tools: single-wafer plasma enhanced CVD (PECVD) and batch low pressure CVD ...
When the source is a chemical vapor precursor, the process is called chemical vapor deposition (CVD). The latter has several variants: low-pressure chemical vapor deposition (LPCVD), plasma-enhanced chemical vapor deposition (PECVD), and plasma-assisted CVD (PACVD). Often a combination of PVD and CVD processes are used in the same or connected ...
Sputter deposition: a glow plasma discharge (usually localized around the "target" by a magnet) bombards the material sputtering some away as a vapor for subsequent deposition. Pulsed electron deposition: a highly energetic pulsed electron beam ablates material from the target generating a plasma stream under nonequilibrium conditions.
Nanotubes being grown by plasma enhanced chemical vapor deposition Animated pent-first nucleation. The catalytic vapor phase deposition of carbon was reported in 1952 [ 11 ] and 1959, [ 12 ] but it was not until 1993 [ 13 ] that carbon nanotubes were formed by this process.
Chemical plasma; Chemical vapor deposition; Chemical vapor deposition of diamond; Chirikov criterion; Chirped pulse amplification; Chromatography detector; Chromo–Weibel instability; Classical-map hypernetted-chain method; Cnoidal wave; Colored-particle-in-cell; Coilgun; Cold plasma, Ozone generator; Collisionality; Colored-particle-in-cell ...