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Ion sources are fundamental to ion milling. Their design and operation are crucial to producing accurate results. The most commonly used ion source relies on radiofrequency (RF) ion sources and direct current (DC) electric fields to generate and accelerate ions from a gas, typically a noble gas like argon or xenon.
Most widespread instruments are using liquid metal ion sources (LMIS), especially gallium ion sources. Ion sources based on elemental gold and iridium are also available. In a gallium LMIS, gallium metal is placed in contact with a tungsten needle, and heated gallium wets the tungsten and flows to the tip of the needle, where the opposing forces of surface tension and electric field form the ...
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
A plasma containing oxygen is used to oxidize ("ash") photoresist and facilitate its removal. Ion milling, or sputter etching, uses lower pressures, often as low as 10 −4 Torr (10 mPa). It bombards the wafer with energetic ions of noble gases, often Ar +, which knock atoms from the substrate by transferring momentum. Because the etching is ...
The four research areas of the IOM are supported by cross-sectional units with cross-sectional tasks. Each cross-sectional unit is managed independently in organisational terms. The current cross-section units are: Modelling and simulation. In this unit, the experimental work within the institute is accompanied and optimised by mathematical ...
Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.
Deep reactive-ion etching (DRIE) is a special subclass of reactive-ion etching (RIE). It enables highly anisotropic etch process used to create deep penetration, steep-sided holes and trenches in wafers /substrates, typically with high aspect ratios .
Ion beam analysis has found use in a number of variable applications, ranging from biomedical uses to studying ancient artifacts. The popularity of this technique stems from the sensitive data that can be collected without significant distortion to the system on which it is studying.