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Copper(I) telluride is an inorganic compound with the chemical formula Cu 2 Te. It can be synthesized by reacting elemental copper and tellurium with a molar ratio of 2:1 at 1200 °C in a vacuum. [3] Cu 2 Te has potential applications in thermoelectric elements and in solar cells, where it is alloyed with cadmium telluride to create a ...
Copper ditelluride is an inorganic compound with the chemical formula CuTe 2. It is a superconductor with a C18 structure and a transition temperature of 1.3 K. [ 2 ] CuTe 2 crystals can be synthesized by reacting elemental copper and tellurium with a molar ratio of 1:2 at a pressure of 65 kbar for 1–3 hours at 1000–1200 °C, followed by ...
Copper telluride may refer to: Weissite, a mineral, Cu 2−x Te; Rickardite, a mineral, Cu 7 Te 5 (or Cu 3−x (x = 0 to 0.36) Te 2) Copper(I) telluride, Cu 2 Te; Copper(II) telluride, CuTe, which occurs as the mineral vulcanite; Copper ditelluride, CuTe 2; Tellurium copper, copper alloy with tellurium
The typical efficiency of TEGs is around 5–8%, although it can be higher. Older devices used bimetallic junctions and were bulky. More recent devices use highly doped semiconductors made from bismuth telluride (Bi 2 Te 3), lead telluride (PbTe), [10] calcium manganese oxide (Ca 2 Mn 3 O 8), [11] [12] or combinations thereof, [13] depending on application temperature.
Copper(II) telluride is an inorganic compound with the chemical formula CuTe that occurs in nature as a rare mineral vulcanite. References This page ...
The Seebeck coefficient (also known as thermopower, [1] thermoelectric power, and thermoelectric sensitivity) of a material is a measure of the magnitude of an induced thermoelectric voltage in response to a temperature difference across that material, as induced by the Seebeck effect. [2]
A thermal copper pillar bump, also known as a "thermal bump", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers (SOA).
The BiTe-based TE material can achieve a conversion efficiency of 8%, an average zT value of 1.05 for p-type and 0.84 for n-type bismuth telluride alloys. [81] Lanthanum telluride can be potentially used in deep space as a thermoelectric generator due to the huge temperature difference in space.
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