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Dynamic random-access memory (dynamic RAM or DRAM) is a type of random-access semiconductor memory that stores each bit of data in a memory cell, usually consisting of a tiny capacitor and a transistor, both typically based on metal–oxide–semiconductor (MOS) technology. While most DRAM memory cell designs use a capacitor and transistor ...
In today's technology, random-access memory takes the form of integrated circuit (IC) chips with MOS (metal–oxide–semiconductor) memory cells. RAM is normally associated with volatile types of memory where stored information is lost if power is removed. The two main types of volatile random-access semiconductor memory are static random ...
A second type, DRAM (dynamic RAM), is based around MOS capacitors. Charging and discharging a capacitor can store a '1' or a '0' in the cell. However, the charge in this capacitor will slowly leak away, and must be refreshed periodically. Because of this refresh process, DRAM uses more power. However, DRAM can achieve greater storage densities.
High Bandwidth Memory (HBM) is a computer memory interface for 3D-stacked synchronous dynamic random-access memory (SDRAM) initially from Samsung, AMD and SK Hynix.It is used in conjunction with high-performance graphics accelerators, network devices, high-performance datacenter AI ASICs, as on-package cache in CPUs [1] and on-package RAM in upcoming CPUs, and FPGAs and in some supercomputers ...
Rambus DRAM was developed for high-bandwidth applications and was positioned by Rambus as replacement for various types of contemporary memories, such as SDRAM. RDRAM is a serial memory bus . DRDRAM was initially expected to become the standard in PC memory , especially after Intel agreed to license the Rambus technology for use with its future ...
DDR SDRAM. Double Data Rate Synchronous Dynamic Random-Access Memory (DDR SDRAM) is a double data rate (DDR) synchronous dynamic random-access memory (SDRAM) class of memory integrated circuits used in computers. DDR SDRAM, also retroactively called DDR1 SDRAM, has been superseded by DDR2 SDRAM, DDR3 SDRAM, DDR4 SDRAM and DDR5 SDRAM.
Magnetoresistive random-access memory (MRAM) is a type of non-volatile random-access memory which stores data in magnetic domains. [1] Developed in the mid-1980s, proponents have argued that magnetoresistive RAM will eventually surpass competing technologies to become a dominant or even universal memory. [2]
Memory refresh is a process of periodically reading information from an area of computer memory and immediately rewriting the read information to the same area without modification, for the purpose of preserving the information. [1] Memory refresh is a background maintenance process required during the operation of semiconductor dynamic random ...
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