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A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
Stan Williams of HP Labs also argued that ReRAM was a memristor. [21] However, others challenged this terminology and the applicability of memristor theory to any physically realizable device is open to question. [22] [23] [24] Whether redox-based resistively switching elements (ReRAM) are covered by the current memristor theory is disputed. [25]
Often the isolation capabilities are inferior to the use of transistors if the on/off ratio for the selector is not sufficient, limiting the ability to operate very large arrays in this architecture. Chalcogenide-based threshold switches have been demonstrated as a viable selector for high-density PCM arrays [22]
The Caravelli-Traversa-Di Ventra equation (CTDV) is a closed-form equation to the evolution of networks of memristors.It was derived by Francesco Caravelli (Los Alamos National Laboratory), Fabio L. Traversa (Memcomputing Inc.) and Massimiliano Di Ventra (UC San Diego) to study the exact evolution of complex circuits made of resistances with memory (memristors).
In the equation above, is the "forgetting" time scale constant, typically associated to memory volatility, while = is the ratio of off and on values of the limit resistances of the memristors, is the vector of the sources of the circuit and is a projector on the fundamental loops of the circuit.
Electrochemical Random-Access Memory (ECRAM) is a type of non-volatile memory (NVM) with multiple levels per cell (MLC) designed for deep learning analog acceleration. [1] [2] [3] An ECRAM cell is a three-terminal device composed of a conductive channel, an insulating electrolyte, an ionic reservoir, and metal contacts.
The fourth passive element, the memristor, was proposed by Leon Chua in a 1971 paper, but a physical component demonstrating memristance was not created until thirty-seven years later. It was reported on April 30, 2008, that a working memristor had been developed by a team at HP Labs led by scientist R. Stanley Williams.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed.