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Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits , monolithic microwave integrated circuits , infrared light-emitting diodes , laser diodes , solar cells and optical windows.
Compounds containing Ga–Ga bonds are true gallium(II) compounds, such as GaS (which can be formulated as Ga 2 4+ (S 2−) 2) and the dioxan complex Ga 2 Cl 4 (C 4 H 8 O 2) 2. [1] There are also compounds of gallium with negative oxidation states, ranging from -5 to -1, most of these compounds being magnesium gallides (Mg x Ga y ).
Double, triple, and quadruple bonds are represented by the symbols =, #, and $ respectively as illustrated by the SMILES O=C=O (carbon dioxide CO 2), C#N (hydrogen cyanide HCN) and [Ga+]$[As-] (gallium arsenide). An additional type of bond is a "non-bond", indicated with ., to indicate that two parts are not bonded together. For example ...
Arsenic is used as the group 15 element in the III-V semiconductors gallium arsenide, indium arsenide, and aluminium arsenide. [10] The valence electron count of GaAs is the same as a pair of Si atoms, but the band structure is completely different which results in distinct bulk properties. [11]
These compounds are mainly of academic interest. For example, "sodium arsenide" is a structural motif adopted by many compounds with the A 3 B stoichiometry. Indicative of their salt-like properties, hydrolysis of alkali metal arsenides gives arsine: Na 3 As + 3 H 2 O → AsH 3 + 3 NaOH Nickel arsenide is a common impurity in ores of nickel.
Gallium arsenide antimonide, also known as gallium antimonide arsenide or GaAsSb (Ga As (1-x) Sb x), is a ternary III-V semiconductor compound; x indicates the fractions of arsenic and antimony in the alloy. GaAsSb refers generally to any composition of the alloy. It is an alloy of gallium arsenide (GaAs) and gallium antimonide (GaSb).
Since metals can display multiple oxidation numbers, the exact definition of how many "valence electrons" an element should have in elemental form is somewhat arbitrary, but the following table lists the free electron densities given in Ashcroft and Mermin, which were calculated using the formula above based on reasonable assumptions about ...
Organogallium compounds can be synthesized by transmetallation, for example the reaction of gallium metal with dimethylmercury: 2Ga + 3Me 2 Hg → 2Me 3 Ga + 3 Hg. or via organolithium compounds or Grignards: GaCl 3 + 3MeMgBr → Me 3 Ga + 3MgBrCl. The electron-deficient nature of gallium can be removed by complex formation, for example