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Following Shockley's theoretical treatment on JFET in 1952, a working practical JFET was made in 1953 by George C. Dacey and Ian M. Ross. [4] Japanese engineers Jun-ichi Nishizawa and Y. Watanabe applied for a patent for a similar device in 1950 termed static induction transistor (SIT). The SIT is a type of JFET with a short channel. [4]
A JFET was first patented by Heinrich Welker in 1945. [4] The static induction transistor (SIT), a type of JFET with a short channel, was invented by Japanese engineers Jun-ichi Nishizawa and Y. Watanabe in 1950. Following Shockley's theoretical treatment on the JFET in 1952, a working practical JFET was built by George C. Dacey and Ian M. Ross ...
In the circuit on the figure, a non-linearized VCR design, the voltage-controlled resistor, the LSK489C JFET, is used as a programmable voltage divider. The VGS supply sets the level of the output resistance of the JFET. The drain-to-source resistance of the JFET (R DS) and the drain resistor (R 1) form the voltage-divider network. The output ...
Generalised FET as an amplifier. A FET amplifier is an amplifier that uses one or more field-effect transistors (FETs). The most common type of FET amplifier is the MOSFET amplifier, which uses metal–oxide–semiconductor FETs (MOSFETs).
FlexFET is a planar, independently double-gated transistor with a damascene metal top gate MOSFET and an implanted JFET bottom gate that are self-aligned in a gate trench. . This device is highly scalable due to its sub-lithographic channel length; non-implanted ultra-shallow source and drain extensions; non-epi raised source and drain regions; and gate-last fl
Improved JFET process technologies, discrete JFET devices and JFET topologies will continue to challenge highly integrated monolithic designs for sockets in high quality electronic products. The primary reasons are cost and customization. Costs are too high for integrated circuit companies to integrate customized high-performance for niche ...
The invention of the high-electron-mobility transistor (HEMT) is usually attributed to physicist Takashi Mimura (三村 高志), while working at Fujitsu in Japan. [4] The basis for the HEMT was the GaAs (gallium arsenide) MOSFET (metal–oxide–semiconductor field-effect transistor), which Mimura had been researching as an alternative to the standard silicon (Si) MOSFET since 1977.
In textbooks, channel length modulation in active mode usually is described using the Shichman–Hodges model, accurate only for old technology: [2] where = drain current, ′ = technology parameter sometimes called the transconductance coefficient, W, L = MOSFET width and length, = gate-to-source voltage, =threshold voltage, = drain-to-source voltage, =, and λ = channel-length modulation ...