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  2. Time-slot interchange - Wikipedia

    en.wikipedia.org/wiki/Time-Slot_Interchange

    In a time-slot interchange (TSI) switch, two memory accesses are required for each connection (one to read and one to store). Let T be the time to access the memory. Therefore, for a connection, 2T time will be taken to access the memory. If there are n connections and t is the operation time for n lines, then t=2nT which gives n=t/2T

  3. Memory timings - Wikipedia

    en.wikipedia.org/wiki/Memory_timings

    The time to read the first bit of memory from a DRAM without an active row is T RCD + CL. Row Precharge Time T RP: The minimum number of clock cycles required between issuing the precharge command and opening the next row. The time to read the first bit of memory from a DRAM with the wrong row open is T RP + T RCD + CL. Row Active Time T RAS

  4. Dynamic random-access memory - Wikipedia

    en.wikipedia.org/wiki/Dynamic_random-access_memory

    To refresh one row of the memory array using RAS only refresh (ROR), the following steps must occur: The row address of the row to be refreshed must be applied at the address input pins. RAS must switch from high to low. CAS must remain high. At the end of the required amount of time, RAS must return high.

  5. RAM limit - Wikipedia

    en.wikipedia.org/wiki/RAM_limit

    The maximum random access memory (RAM) installed in any computer system is limited by hardware, software and economic factors. The hardware may have a limited number of address bus bits, limited by the processor package or design of the system. Some of the address space may be shared between RAM, peripherals, and read-only memory.

  6. Non-volatile random-access memory - Wikipedia

    en.wikipedia.org/wiki/Non-volatile_random-access...

    To date, the only such system to enter widespread production is ferroelectric RAM, or F-RAM (sometimes referred to as FeRAM).F-RAM is a random-access memory similar in construction to DRAM but (instead of a dielectric layer like in DRAM) contains a thin ferroelectric film of lead zirconate titanate [Pb(Zr,Ti)O 3], commonly referred to as PZT.

  7. Memory Reference Code - Wikipedia

    en.wikipedia.org/wiki/Memory_Reference_Code

    For instance, under a 1,066MHz FSB, the only choices regarding memory speed in the MRC are DDR2-667 and DDR2-800. We have to provide additional choices. We have to provide additional choices. For people who want higher memory frequency, we used the setting of 800MHz FSB:DDR2-800 in MRC, but overclocked it to work with a 1,066MHz FSB, so we ...

  8. Memory controller - Wikipedia

    en.wikipedia.org/wiki/Memory_controller

    These new models, with a DDR2 controller, use a different physical socket (known as Socket AM2), so that they will only fit in motherboards designed for the new type of RAM. When the memory controller is not on-die, the same CPU may be installed on a new motherboard, with an updated northbridge to use newer memory.

  9. Read–write memory - Wikipedia

    en.wikipedia.org/wiki/Read–write_memory

    Read–write memory, or RWM, is a type of computer memory that can be easily written to as well as read from using electrical signaling normally associated with running a software, and without any other physical processes.