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  2. Drain-induced barrier lowering - Wikipedia

    en.wikipedia.org/wiki/Drain-induced_barrier_lowering

    As channel length decreases, the barrier φ B to be surmounted by an electron from the source on its way to the drain reduces. Drain-induced barrier lowering (DIBL) is a short-channel effect in MOSFETs referring originally to a reduction of threshold voltage of the transistor at higher drain voltages.

  3. Current–voltage characteristic - Wikipedia

    en.wikipedia.org/wiki/Current–voltage...

    Tunnel diodes and Gunn diodes are examples of components that have negative resistance. Hysteresis vs single-valued: Devices which have hysteresis; that is, in which the current–voltage relation depends not only on the present applied input but also on the past history of inputs, have I–V curves consisting of families of closed loops. Each ...

  4. Shockley diode equation - Wikipedia

    en.wikipedia.org/wiki/Shockley_diode_equation

    Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3] He calls it "a theoretical rectification formula giving the maximum rectification", with a footnote referencing a paper by Carl Wagner , Physikalische Zeitschrift 32 , pp ...

  5. Active rectification - Wikipedia

    en.wikipedia.org/wiki/Active_rectification

    Using these ideal diodes rather than standard diodes for solar electric panel bypass, reverse-battery protection, or bridge rectifiers reduces the amount of power dissipated in the diodes, improving efficiency and reducing the size of the circuit board and the weight of the heat sink required to deal with the power dissipation.

  6. Diode modelling - Wikipedia

    en.wikipedia.org/wiki/Diode_modelling

    Ideal diode with a series voltage source and resistor. The I-V characteristic of the final circuit looks like this: I-V characteristic of an ideal diode with a series voltage source and resistor. The real diode now can be replaced with the combined ideal diode, voltage source and resistor and the circuit then is modelled using just linear elements.

  7. p–n junction - Wikipedia

    en.wikipedia.org/wiki/P–n_junction

    The Shockley ideal diode equation characterizes the current across a p–n junction as a function of external voltage and ambient conditions (temperature, choice of semiconductor, etc.). To see how it can be derived, we must examine the various reasons for current.

  8. p–n diode - Wikipedia

    en.wikipedia.org/wiki/P–n_diode

    A p–n diode is a type of semiconductor diode based upon the p–n junction. The diode conducts current in only one direction, and it is made by joining a p-type semiconducting layer to an n-type semiconducting layer. Semiconductor diodes have multiple uses including rectification of alternating current to direct current, in the detection of ...

  9. Differential variational inequality - Wikipedia

    en.wikipedia.org/wiki/Differential_variational...

    An ideal diode is a diode that conducts electricity in the forward direction with no resistance if a forward voltage is applied, but allows no current to flow in the reverse direction. Then if the reverse voltage is v ( t ) {\displaystyle v(t)} , and the forward current is i ( t ) {\displaystyle i(t)} , then there is a complementarity ...