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Piranha solution, also known as piranha etch, is a mixture of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2). The resulting mixture is used to clean organic residues off substrates, for example silicon wafers. [1] Because the mixture is a strong oxidizing agent, it will decompose most organic matter, and it will also hydroxylate most ...
The RCA clean is a standard set of wafer cleaning steps which need to be performed before high-temperature processing steps (oxidation, diffusion, CVD) of silicon wafers in semiconductor manufacturing. Werner Kern developed the basic procedure in 1965 while working for RCA, the Radio Corporation of America. [1][2][3] It involves the following ...
Etching tanks used to perform Piranha, hydrofluoric acid or RCA clean on 4-inch wafer batches at LAAS technological facility in Toulouse, France. Etching is used in microfabrication to chemically remove layers from the surface of a wafer during manufacturing. Etching is a critically important process module in fabrication, and every wafer ...
This page was last edited on 6 August 2007, at 19:43 (UTC).; Text is available under the Creative Commons Attribution-ShareAlike License 4.0; additional terms may ...
A publication in 1957 revealed that stain films can be grown in dilute solutions of nitric acid in concentrated hydrofluoric acid. Porous silicon formation by stain-etching is particularly attractive because of its simplicity and the presence of readily available corrosive reagents; namely nitric acid (HNO 3 ) and hydrogen fluoride (HF).
Semiconductor device fabrication. Semiconductor device fabrication is the process used to manufacture semiconductor devices, typically integrated circuits (ICs) such as computer processors, microcontrollers, and memory chips (such as NAND flash and DRAM). It is a multiple-step photolithographic and physico-chemical process (with steps such as ...
Buffered oxide etch (BOE), also known as buffered HF or BHF, is a wet etchant used in microfabrication. Its primary use is in etching thin films of silicon dioxide (SiO 2) or silicon nitride (Si 3 N 4). It is a mixture of a buffering agent, such as ammonium fluoride (NH 4 F), and hydrofluoric acid (HF). Concentrated HF (typically 49% HF in ...
The Wright etch (also Wright-Jenkins etch) is a preferential etch for revealing defects in <100>- and <111>-oriented, p- and n-type silicon wafers used for making transistors, microprocessors, memories, and other components. Revealing, identifying, and remedying such defects is essential for progress along the path predicted by Moore's law.
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