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  2. Dennard scaling - Wikipedia

    en.wikipedia.org/wiki/Dennard_scaling

    In semiconductor electronics, Dennard scaling, also known as MOSFET scaling, is a scaling law which states roughly that, as transistors get smaller, their power density stays constant, so that the power use stays in proportion with area; both voltage and current scale (downward) with length.

  3. High-temperature operating life - Wikipedia

    en.wikipedia.org/wiki/High-temperature_operating...

    High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability. This test stresses the IC at an elevated temperature, high voltage and dynamic operation for a predefined period of time. The IC is usually monitored under stress and tested at intermediate intervals.

  4. Thermal conductance and resistance - Wikipedia

    en.wikipedia.org/wiki/Thermal_conductance_and...

    Thermal Conductivity: Theory, Properties, and Applications. Springer Science & Business Media. ISBN 978-0-306-48327-1. Younes Shabany (2011). Heat Transfer: Thermal Management of Electronics. CRC Press. ISBN 978-1-4398-1468-0. Xingcun Colin Tong (2011). Advanced Materials for Thermal Management of Electronic Packaging. Springer Science ...

  5. Junction temperature - Wikipedia

    en.wikipedia.org/wiki/Junction_temperature

    Every time the temperature sensing network determines that a rise above the specified junction temperature (), is imminent, measures such as clock gating, clock stretching, clock speed reduction and others (commonly referred to as thermal throttling) are applied to prevent the temperature to raise further. If the applied mechanisms are not ...

  6. Current mirror - Wikipedia

    en.wikipedia.org/wiki/Current_mirror

    A MOSFET version of Figure 3 is shown in Figure 4, where MOSFETs M 3 and M 4 operate in ohmic mode to play the same role as emitter resistors R E in Figure 3, and MOSFETs M 1 and M 2 operate in active mode in the same roles as mirror transistors Q 1 and Q 2 in Figure 3. An explanation follows of how the circuit in Figure 3 works.

  7. Diode modelling - Wikipedia

    en.wikipedia.org/wiki/Diode_modelling

    The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).

  8. Power MOSFET - Wikipedia

    en.wikipedia.org/wiki/Power_MOSFET

    NXP 7030AL - N-channel TrenchMOS logic level FET IRF640 Power Mosfet die. The power MOSFET is the most widely used power semiconductor device in the world. [3] As of 2010, the power MOSFET accounts for 53% of the power transistor market, ahead of the insulated-gate bipolar transistor (27%), RF power amplifier (11%) and bipolar junction transistor (9%). [24]

  9. Wilson current mirror - Wikipedia

    en.wikipedia.org/wiki/Wilson_current_mirror

    Fig. 3: Small-signal model for impedance calculation. A circuit is a current source only to the extent that its output current is independent of its output voltage. In the circuits of Fig. 1 and Fig. 2, the output voltage of importance is the potential from the collector of Q 3 to ground.