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A silicon ingot. Monocrystalline silicon, more often called single-crystal silicon, in short mono c-Si or mono-Si, is the base material for silicon -based discrete components and integrated circuits used in virtually all modern electronic equipment. Mono-Si also serves as a photovoltaic, light-absorbing material in the manufacture of solar cells.
Monocrystalline silicon (mono-Si) grown by the Czochralski method is often referred to as monocrystalline Czochralski silicon (Cz-Si). It is the basic material in the production of integrated circuits used in computers, TVs, mobile phones and all types of electronic equipment and semiconductor devices. [6]
Planar process. The planar process is a manufacturing process used in the semiconductor industry to build individual components of a transistor, and in turn, connect those transistors together. It is the primary process by which silicon integrated circuit chips are built, and it is the most commonly used method of producing junctions during the ...
A boule is a single-crystal ingot produced by synthetic means. [1] A boule of silicon is the starting material for most of the integrated circuits used today. In the semiconductor industry synthetic boules can be made by a number of methods, such as the Bridgman technique [2] and the Czochralski process, which result in a cylindrical rod of ...
Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight. In electronics, crystalline silicon is typically the monocrystalline form of silicon, and is used for ...
In 1965, C.W. Mueller and P.H. Robinson fabricated a MOSFET (metal–oxide–semiconductor field-effect transistor) using the silicon-on-sapphire process at RCA Laboratories. [40] Semiconductor device manufacturing has since spread from Texas and California in the 1960s to the rest of the world, including Asia, Europe, and the Middle East.
In 1990, Peregrine Semiconductor began development of an SOI process technology utilizing a standard 0.5 μm CMOS node and an enhanced sapphire substrate. Its patented silicon on sapphire (SOS) process is widely used in high-performance RF applications. The intrinsic benefits of the insulating sapphire substrate allow for high isolation, high ...
Smart cut. Smart cut is a technological process that enables the transfer of very fine layers of crystalline silicon material onto a mechanical support. It was invented by Michel Bruel of CEA-Leti, and was protected by US patent 5374564. [1] The application of this technological procedure is mainly in the production of silicon-on-insulator (SOI ...