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Ion sources are fundamental to ion milling. Their design and operation are crucial to producing accurate results. The most commonly used ion source relies on radiofrequency (RF) ion sources and direct current (DC) electric fields to generate and accelerate ions from a gas, typically a noble gas like argon or xenon.
Small argon cluster GCIB sources are increasingly used for analytical depth-profiling by secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS). Argon clusters greatly reduce the damage introduced to the specimen during depth-profiling, making it practical to do so for many organic and polymeric materials for the ...
Another ion source seen in commercially available instruments is a helium ion source, which is inherently less damaging to the sample than Ga ions although it will still sputter small amounts of material especially at high magnifications and long scan times. As helium ions can be focused into a small probe size and provide a much smaller sample ...
This method of nanopore fabrication relies on the ion beam to remove (sputter) some of the material from the back of the sample, revealing part of the hole underneath. Alternatively, if the hole has already been milled through the substrate, the argon beam is aimed at the wafer, and by lateral mass transport atoms from elsewhere on the wafer ...
An ion beam is a beam of ions, a type of charged particle beam. Ion beams have many uses in electronics manufacturing (principally ion implantation) and other industries. There are many ion beam sources, some derived from the mercury vapor thrusters developed by NASA in the 1960s. The most widely used ion beams are of singly-charged ions.
A krypton laser is an ion laser using ions of the noble gas krypton as its gain medium.The laser pumping is done by an electrical discharge.Krypton lasers are widely used in scientific research, and in commercial uses, when the krypton is mixed with argon, it creates a "white-light" lasers, useful for laser light shows.
This process involves argon-ion milling to transfer the pattern of metal oxide nanoparticles into oriented, multi-layer thin films and magnetic tunnel junctions. [ 8 ] Majetich pioneered the use of conductive atomic force microscopy to measure magnetoresistance.
Ion implantation setup with mass separator. Ion implantation equipment typically consists of an ion source, where ions of the desired element are produced, an accelerator, where the ions are electrostatically accelerated to a high energy or using radiofrequency, and a target chamber, where the ions impinge on a target, which is the material to be implanted.