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The static qualifier differentiates SRAM from dynamic random-access memory (DRAM): SRAM will hold its data permanently in the presence of power, while data in DRAM decays in seconds and thus must be periodically refreshed. SRAM is faster than DRAM but it is more expensive in terms of silicon area and cost.
To prevent this, DRAM requires an external memory refresh circuit which periodically rewrites the data in the capacitors, restoring them to their original charge. This refresh process is the defining characteristic of dynamic random-access memory, in contrast to static random-access memory (SRAM) which
The two main types of volatile random-access semiconductor memory are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Non-volatile RAM has also been developed [3] and other types of non-volatile memories allow random access for read operations, but either do not allow write operations or have other kinds of limitations.
Non-volatile random-access memory (NVRAM) is random-access memory that retains data without applied power. This is in contrast to dynamic random-access memory (DRAM) and static random-access memory (SRAM), which both maintain data only for as long as power is applied, or forms of sequential-access memory such as magnetic tape, which cannot be randomly accessed but which retains data ...
The first modern memory cells were introduced in 1964, when John Schmidt designed the first 64-bit p-channel MOS static random-access memory (SRAM). [ 15 ] [ 16 ] SRAM typically has six- transistor cells, whereas DRAM (dynamic random-access memory) typically has single-transistor cells.
The two main types of random-access memory (RAM) are static RAM (SRAM), which uses several transistors per memory cell, and dynamic RAM (DRAM), which uses a transistor and a MOS capacitor per cell. Non-volatile memory (such as EPROM , EEPROM and flash memory ) uses floating-gate memory cells, which consist of a single floating-gate transistor ...
The two main types of volatile random-access memory (RAM) are static random-access memory (SRAM) and dynamic random-access memory (DRAM). Bipolar SRAM was invented by Robert Norman at Fairchild Semiconductor in 1963, [9] followed by the development of MOS SRAM by John Schmidt at Fairchild in 1964. [13]
Quad Data Rate (QDR) SRAM is a type of static RAM computer memory that can transfer up to four words of data in each clock cycle. Like Double Data-Rate (DDR) SDRAM, QDR SRAM transfers data on both rising and falling edges of the clock signal. The main purpose of this capability is to enable reads and writes to occur at high clock frequencies ...
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