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The AVRs have 32 single-byte registers and are classified as 8-bit RISC devices. Flash, EEPROM, and SRAM are all integrated onto a single chip, removing the need for external memory in most applications. Some devices have a parallel external bus option to allow adding additional data memory or memory-mapped devices.
Static random-access memory (static RAM or SRAM) is a type of random-access memory (RAM) that uses latching circuitry (flip-flop) to store each bit. SRAM is volatile memory; data is lost when power is removed. The static qualifier differentiates SRAM from dynamic random-access memory (DRAM):
Common flash devices such as USB flash drives and memory cards provide only a block-level interface, or flash translation layer (FTL), which writes to a different cell each time to wear-level the device. This prevents incremental writing within a block; however, it does help the device from being prematurely worn out by intensive write patterns.
Examples of non-volatile memory are flash memory and ROM, PROM, EPROM, and EEPROM memory. Examples of volatile memory are dynamic random-access memory (DRAM) used for primary storage and static random-access memory (SRAM) used mainly for CPU cache. Most semiconductor memory is organized into memory cells each storing one bit (0 or 1).
In general, the term RAM refers solely to solid-state memory devices (either DRAM or SRAM), and more specifically the main memory in most computers. In optical storage, the term DVD-RAM is somewhat of a misnomer since, it is not random access; it behaves much like a hard disc drive if somewhat slower.
Flash memory – In this type the writing process is intermediate in speed between EEPROMS and RAM memory; it can be written to, but not fast enough to serve as main memory. It is often used as a semiconductor version of a hard disk , to store files.
nvSRAM is a type of non-volatile random-access memory (NVRAM). [1] [2] nvSRAM extends the functionality of basic SRAM by adding non-volatile storage such as an EEPROM to the SRAM chip. In operation, data is written to and read from the SRAM portion with high-speed access; the data in SRAM can then be stored into or retrieved from the non ...
CMOS memory was commercialized by RCA, which launched a 288-bit CMOS SRAM memory chip in 1968. [23] CMOS memory was initially slower than NMOS memory, which was more widely used by computers in the 1970s. [24] In 1978, Hitachi introduced the twin-well CMOS process, with its HM6147 (4 kb SRAM) memory chip, manufactured with a 3 μm process. The ...