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Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
These characteristics are also known as I–V curves, referring to the standard symbols for current and voltage. In electronic components with more than two terminals, such as vacuum tubes and transistors, the current–voltage relationship at one pair of terminals may depend on the current or voltage on a third terminal. This is usually ...
In a circuit with a three terminal device, such as a transistor, the current–voltage curve of the collector-emitter current depends on the base current. This is depicted on graphs by a series of (I C –V CE) curves at different base currents. A load line drawn on this graph shows how the base current will affect the operating point of the ...
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
In an integrated circuit version of the DTL gate, R3 is replaced by two level-shifting diodes connected in series. Also the bottom of R4 is connected to ground to provide bias current for the diodes and a discharge path for the transistor base. The resulting integrated circuit runs off a single power supply voltage. [9] [10] [11]
Figure 7: Typical op-amp current source. The simple transistor current source from Figure 4 can be improved by inserting the base-emitter junction of the transistor in the feedback loop of an op-amp (Figure 7). Now the op-amp increases its output voltage to compensate for the V BE drop. The circuit is actually a buffered non-inverting amplifier ...
In low voltage converters (around 10 volts and less), the voltage drop of a diode (typically around 0.7 to 1 volt for a silicon diode at its rated current) has an adverse effect on efficiency. One classic solution replaces standard silicon diodes with Schottky diodes , which exhibit very low voltage drops (as low as 0.3 volts).
If a diode–transistor logic gate drives a transistor inverter of similar construction, the transistor will have a similar base-collector capacitance that is amplified by the transistor gain, so that it will be too slow to pass the glitch. But when the diode is much slower, recovery will become a concern:
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