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For power semiconductor devices (such as BJT, MOSFET, thyristor or IGBT), the safe operating area (SOA) is defined as the voltage and current conditions over which the device can be expected to operate without self-damage. [1] Illustration of safe operating area of a bipolar power transistor.
Listed are many semiconductor scale examples for various metal–oxide–semiconductor field-effect transistor (MOSFET, or MOS transistor) semiconductor manufacturing process nodes. Timeline of MOSFET demonstrations
A thermal copper pillar bump, also known as a "thermal bump", is a thermoelectric device made from thin-film thermoelectric material embedded in flip chip interconnects (in particular copper pillar solder bumps) for use in electronics and optoelectronic packaging, including: flip chip packaging of CPU and GPU integrated circuits (chips), laser diodes, and semiconductor optical amplifiers (SOA).
High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability. This test stresses the IC at an elevated temperature, high voltage and dynamic operation for a predefined period of time.
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
In semiconductor physics, the Haynes–Shockley experiment was an experiment that demonstrated that diffusion of minority carriers in a semiconductor could result in a current. The experiment was reported in a short paper by Haynes and Shockley in 1948, [1] with a more detailed version published by Shockley, Pearson, and Haynes in 1949.
In 2003, a research team at NEC fabricated the first MOSFETs with a channel length of 3 nm, using the PMOS and NMOS processes. [20] [21] In 2006, a team from the Korea Advanced Institute of Science and Technology (KAIST) and the National Nano Fab Center, developed a 3 nm width multi-gate MOSFET, the world's smallest nanoelectronic device, based on gate-all-around technology.
Cover of the comic book "THE SHMOO" The plot takes its name from the Shmoo, a fictional species created by Al Capp in the cartoon Li'l Abner.These small, blob-like creatures have shapes similar to the "working" volumes that would be enclosed by shmoo plots drawn against three independent variables (such as voltage, temperature, and response speed).