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p–n junctions represent the simplest case of a semiconductor electronic device; a p-n junction by itself, when connected on both sides to a circuit, is a diode. More complex circuit components can be created by further combinations of p-type and n-type semiconductors; for example, the bipolar junction transistor (BJT) is a semiconductor in ...
Shockley derives an equation for the voltage across a p-n junction in a long article published in 1949. [2] Later he gives a corresponding equation for current as a function of voltage under additional assumptions, which is the equation we call the Shockley ideal diode equation. [3]
The Shockley diode equation relates the diode current of a p-n junction diode to the diode voltage .This relationship is the diode I-V characteristic: = (), where is the saturation current or scale current of the diode (the magnitude of the current that flows for negative in excess of a few , typically 10 −12 A).
The following image shows change in excess carriers being generated (green:electrons and purple:holes) with increasing light intensity (generation rate /cm 3) at the center of an intrinsic semiconductor bar.
The model of a forward biased pn junction having an approximately constant 0.7V is also a much used approximation for transistor base-emitter junction voltage in amplifier design. The piecewise method is similar to the small signal method in that linear network analysis techniques can only be applied if the signal stays within certain bounds.
Assume that the semiconductor wafer is p-type material.Also assume a ring of n-type material is placed around a transistor, and placed beneath the transistor. If the p-type material within the n-type ring is now connected to the negative terminal of the power supply and the n-type ring is connected to the positive terminal, the 'holes' in the p-type region are pulled away from the p–n ...
Together with the use of metallization, and the concepts of p–n junction isolation and surface passivation, it is possible to create circuits on a single silicon crystal slice (a wafer) from a monocrystalline silicon boule. The process involves the basic procedures of silicon dioxide (SiO 2) oxidation, SiO 2 etching and heat diffusion.
Low-level injection conditions for a p–n junction, in physics and electronics, refers to the state where the number of minority carriers generated is small compared to the majority carriers of the material. The semiconductor's majority-carrier concentration will remain (relatively) unchanged, while the minority-carrier concentration sees a ...