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Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
A typical example are Howland current source [2] and its derivative Deboo integrator. [3] In the last example (Fig. 1), the Howland current source consists of an input voltage source, V IN, a positive resistor, R, a load (the capacitor, C, acting as impedance Z) and a negative impedance converter INIC (R 1 = R 2 = R 3 = R and the op-amp).
The company in 2013 announced its goal was a terabyte of storage on a single RRAM integrated circuit, compatible with standard CMOS semiconductor manufacturing processes, [10] with a prototype showcased the same year having the theoretical ability to achieve this on a 200mm 2 chip.
(For example, if a computer has 2 GB (1024 3 B) of RAM and a 1 GB page file, the operating system has 3 GB total memory available to it.) When the system runs low on physical memory, it can " swap " portions of RAM to the paging file to make room for new data, as well as to read previously swapped information back into RAM.
A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
For example, a system with 2 13 = 8,192 rows would require a staggered refresh rate of one row every 7.8 μs which is 64 ms divided by 8,192 rows. A few real-time systems refresh a portion of memory at a time determined by an external timer function that governs the operation of the rest of a system, such as the vertical blanking interval that ...
This approach still requires a fairly substantial current to generate the field, however, which makes it less interesting for low-power uses, one of MRAM's primary disadvantages. Additionally, as the device is scaled down in size, there comes a time when the induced field overlaps adjacent cells over a small area, leading to potential false writes.
Also, flash-based devices experience memory wear that reduces service life resulting from limitations of flash memory that impose a finite number of program–erase cycles used to write data. Due to this, solid-state storage is frequently used for hybrid drives , in which solid-state storage serves as a cache for frequently accessed data ...