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The DDR3L (DDR3 Low Voltage) standard is an addendum to the JESD79-3 DDR3 Memory Device Standard specifying low voltage devices. [31] The DDR3L standard is 1.35 V and has the label PC3L for its modules.
A module of any particular size can therefore be assembled either from 32 small chips (36 for ECC memory), or 16(18) or 8(9) bigger ones. DDR memory bus width per channel is 64 bits (72 for ECC memory). Total module bit width is a product of bits per chip and number of chips. It also equals number of ranks (rows) multiplied by DDR memory bus width.
The memory is divided into several equally sized but independent sections called banks, allowing the device to operate on a memory access command in each bank simultaneously and speed up access in an interleaved fashion. This allows SDRAMs to achieve greater concurrency and higher data transfer rates than asynchronous DRAMs could.
DDR3, DDR3L memory interface; 1080p multi-format video decoding and 1080p video encoding for H.264; The RK3128 is a higher-end variant of RK3126, also to be introduced in Q4 2014, that features more integrated external interfaces, including CVBS, HDMI, Ethernet MAC, S/PDIF, Audio DAC, and USB. It targets more fully featured tablets and set-top ...
A memory rank is a set of DRAM chips connected to the same chip select, which are therefore accessed simultaneously. In practice all DRAM chips share all of the other command and control signals, and only the chip select pins for each rank are separate (the data pins are shared across ranks).
High bandwidth memory (HBM) are basically a stack of memory chips, small components that store data. They can store more information and transmit data more quickly than the older technology ...
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