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Dry etching is used in conjunction with photolithographic techniques to attack certain areas of a semiconductor surface in order to form recesses in material.. Applications include contact holes (which are contacts to the underlying semiconductor substrate), via holes (which are holes that are formed to provide an interconnect path between conductive layers in the layered semiconductor device ...
Drypoint is a printmaking technique of the intaglio family, in which an image is incised into a plate (or "matrix") with a hard-pointed "needle" of sharp metal or diamond point. In principle, the method is practically identical to engraving .
Dry etching processes, i.e. formic acid vapor cleaning, are preferred based on the minimization of the immersion in fluids and the resulting etching of the passivation or the adhesion layer. [5] Using the CMP process, which is especially for Cu and Al required, creates a planarized surface with micro roughness around several nanometres and ...
Etching is a critically important process module in fabrication, and every wafer undergoes many etching steps before it is complete. For many etch steps, part of the wafer is protected from the etchant by a "masking" material which resists etching. In some cases, the masking material is a photoresist which has been patterned using photolithography.
The dry etch is then performed so that structured etching is achieved. After the process, the remaining photoresist has to be removed. This is also done in a special plasma etcher, called an asher. [14] Dry etching allows a reproducible, uniform etching of all materials used in silicon and III-V semiconductor technology. By using inductively ...
In etching, a liquid ("wet") or plasma ("dry") chemical agent removes the uppermost layer of the substrate in the areas that are not protected by photoresist. In semiconductor fabrication, dry etching techniques are generally used, as they can be made anisotropic, in order to avoid significant undercutting of the photoresist pattern. This is ...
Polysilicon and nickel are used for 10–50 μm etched depths. In DRIE of polymers, Bosch process with alternating steps of SF 6 etching and C 4 F 8 passivation take place. Metal masks can be used, however they are expensive to use since several additional photo and deposition steps are always required.
Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure by an electromagnetic field.