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In 1954, Texas Instruments designed and manufactured the first transistor radio. The Regency TR-1 used germanium transistors, as silicon transistors were much more expensive at the time. This was an effort by Haggerty to increase market demand for transistors.
1950's PNP Transistors by General Electric. TOP ROW (L-R): 2N43, 2N44, 2N45, 2N107 and 2N188A BOTTOM ROW: 2N107, 2N191 and 2N241. The 2N107 is an early germanium alloy junction PNP transistor developed by General Electric (GE) in 1955, to become GE's entry into the electronic hobbyist market successfully started with the CK722 transistor.
Brattain and H. R. Moore made a demonstration to several of their colleagues and managers at Bell Labs on the afternoon of 23 December 1947, often given as the birth date of the transistor. The "PNP point-contact germanium transistor" operated as a speech amplifier with a power gain of 18 in that trial.
All these were germanium PNP transistors. Mullard's first silicon transistors were the OC201 to OC207, PNP alloy types using the standard SO-2 metal-over-glass construction such as the OC200 shown. From about 1960 Mullard switched to using the BC prefix for silicon, and AC for germanium, eliminating the confusion of part numbers. in the mid ...
In early 1957, the first RTMA/Jedec "2N" numbered 2N63, 2N64 and 2N65 transistors were commercially sold by Tung-Sol and year prior, Raytheon had these “2N6X” numbers. Tung-Sol may have been a supplier as a second-source to Raytheon. The 2N63 and 2N64 varied in power gain while the 2N65 had the highest gain of these germanium power transistors.
In 1960, Fairchild built a circuit with four transistors on a single wafer of silicon, thereby creating the first silicon integrated circuit (Texas Instruments' Jack Kilby had developed an integrated circuit made of germanium on September 12, 1958, and was awarded a U.S. patent, however Kilby's method was not scalable and the semiconductor ...
Teal joined Bell Labs in 1930 and would remain employed there for 22 years. [1] During his time there, he continued to work with germanium and silicon. [1] When William Shockley's group at Bell Labs invented the transistor in 1947, Teal realized that substantial improvements in the device would result if it was fabricated using a single crystal, rather than the polycrystalline material then ...
The first high-frequency transistor was the surface-barrier germanium transistor developed by Philco in 1953, capable of operating at frequencies up to 60 MHz. [34] They were made by etching depressions into an n-type germanium base from both sides with jets of indium(III) sulfate until it was a few ten-thousandths of an inch thick.
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