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A memristor (/ ˈ m ɛ m r ɪ s t ər /; a portmanteau of memory resistor) is a non-linear two-terminal electrical component relating electric charge and magnetic flux linkage.It was described and named in 1971 by Leon Chua, completing a theoretical quartet of fundamental electrical components which also comprises the resistor, capacitor and inductor.
Resistive random-access memory (ReRAM or RRAM) is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material, often referred to as a memristor. One major advantage of ReRAM over other NVRAM technologies is the ability to scale below 10 nm.
While the memristor is defined in terms of a two-terminal circuit element, there was an implementation of a three-terminal device called a memistor developed by Bernard Widrow in 1960. Memistors formed basic components of a neural network architecture called ADALINE developed by Widrow. [1] [2] The memistor was also used in MADALINE.
Scientists have discovered a new component of circuitry called a "meminductor." Even after 200 years, circuits are still blowing our minds.
1995 — Motorola (later to become Freescale Semiconductor, and subsequently NXP Semiconductors) initiates work on MRAM development 1996 — Spin torque transfer is proposed [ 27 ] [ 28 ] 1997 — Sony published the first Japan Patent Application for S.P.I.N.O.R. (Spin Polarized Injection Non-Volatile Orthogonal Read/Write RAM), a forerunner of ...
VRAM (Video random access memory) – An older type of dual-ported memory once used for the frame buffers of video adapters (video cards). SDRAM (Synchronous dynamic random-access memory) – This added circuitry to the DRAM chip which synchronizes all operations with a clock signal added to the computer's memory bus.
The Williams tube works by displaying a grid of dots on a cathode-ray tube (CRT). Due to the way CRTs work, this creates a small charge of static electricity over each dot. The charge at the location of each of the dots is read by a thin metal sheet just in front of the display.
The memory cell is the fundamental building block of memory. It can be implemented using different technologies, such as bipolar, MOS, and other semiconductor devices.It can also be built from magnetic material such as ferrite cores or magnetic bubbles. [1]