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Its properties have been studied in detail. [52] Silicon boils at 3265 °C: this, while high, is still lower than the temperature at which its lighter congener carbon sublimes (3642 °C) and silicon similarly has a lower heat of vaporisation than carbon, consistent with the fact that the Si–Si bond is weaker than the C–C bond. [51]
The intuition was followed by successful experimental results published in 1990. In the published experiment, it was revealed that silicon wafers can emit light if subjected to electrochemical and chemical dissolution. The published result stimulated the interest of the scientific community in its non-linear optical and electrical properties ...
Silicon carbide can host point defects in the crystal lattice, which are known as color centers. These defects can produce single photons on demand and thus serve as a platform for single-photon source. [94] Such a device is a fundamental resource for many emerging applications of quantum information science.
Crystalline silicon or (c-Si) is the crystalline forms of silicon, either polycrystalline silicon (poly-Si, consisting of small crystals), or monocrystalline silicon (mono-Si, a continuous crystal). Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells .
Efforts have been made to establish computer models of cellular behavior. For example, in 2007 researchers developed an in silico model of tuberculosis to aid in drug discovery, with the prime benefit of its being faster than real time simulated growth rates, allowing phenomena of interest to be observed in minutes rather than months. [ 9 ]
Crystalline silicon has a metallic luster and a grayish color. Single crystals can be grown with the Czochralski process. Crystalline silicon can be doped with elements such as boron, gallium, germanium, phosphorus or arsenic. Doped silicon is used in solid-state electronic devices, such as solar cells, rectifiers and computer chips. [1]
While silicon detectors cannot be thicker than a few millimeters, germanium can have a sensitive layer (depletion region) thickness of centimeters, and therefore can be used as a total absorption detector for gamma rays up to a few MeV. These detectors are also called high-purity germanium detectors (HPGe) or hyperpure germanium detectors.
Since silicon is an indirect band gap semiconductor, the quantum yield of radiative recombination in this material is very low. As the thickness of silicon-based nanostructures reduces below the effective Bohr radius (about 9 nm, in silicon) the quantum efficiency of light emission from this material increases owing to the quantum confinement ...