Search results
Results from the WOW.Com Content Network
Tungsten(VI) fluoride, also known as tungsten hexafluoride, is an inorganic compound with the formula W F 6. It is a toxic, corrosive, colorless gas, with a density of about 13 kg/m 3 (22 lb/cu yd) (roughly 11 times heavier than air). [2] [3] It is the densest known gas under standard ambient temperature and pressure (298 K, 1 atm). [4]
Tungsten fluoride may refer to: Tungsten tetrafluoride (tungsten(IV) fluoride) Tungsten pentafluoride (tungsten(V) fluoride) Tungsten hexafluoride (tungsten(VI) fluoride)
Tungsten tetrafluoride is an inorganic compound with the formula WF 4. This little studied solid has been invoked, together with tungsten pentafluoride , as an intermediate in the chemical vapor deposition of tungsten films using tungsten hexafluoride .
Tungsten(V) fluoride is an inorganic compound with the formula WF 5. It is a hygroscopic yellow solid. It is a hygroscopic yellow solid. Like most pentafluorides, it adopts a tetrameric structure, consisting of [WF 5 ] 4 molecules.
In 1941 Van Arkel recognised three extreme materials and associated bonding types. Using 36 main group elements, such as metals, metalloids and non-metals, he placed ionic, metallic and covalent bonds on the corners of an equilateral triangle, as well as suggested intermediate species.
The reaction of tungsten(VI) oxytetrachloride and hydrogen fluoride will also produce WOF 4. [3] WOCl 4 + 4HF → WOF 4 + 4HCl. WOF 4 can also prepared by the reaction of lead(II) fluoride and tungsten trioxide at 700 °C. [3] 2PbF 2 + WO 3 → WOF 4 + 2PbO. Tungsten(VI) oxytetrafluoride hydrolyzes into tungstic acid. [1] [9] WOF 4 + 2 H 2 O ...
When the pH of the solution is increased by adding an alkaline solution to it, the extent of hydrolysis increases. Measurements of pH or colour change are used to derive the equilibrium constant for the reaction. Further hydrolysis may occur, producing dimeric, trimeric or polymeric species containing hydroxy- or oxy- groups.
Direct bonding, or fusion bonding, is a wafer bonding process without any additional intermediate layers. It is based on chemical bonds between two surfaces of any material possible meeting numerous requirements. [1] These requirements are specified for the wafer surface as sufficiently clean, flat and smooth.