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  2. Molybdenum disulfide - Wikipedia

    en.wikipedia.org/wiki/Molybdenum_disulfide

    Due to the lack of spatial inversion symmetry, odd-layer MoS2 is a promising material for valleytronics because both the CBM and VBM have two energy-degenerate valleys at the corners of the first Brillouin zone, providing an exciting opportunity to store the information of 0s and 1s at different discrete values of the crystal momentum.

  3. Metal–semiconductor junction - Wikipedia

    en.wikipedia.org/wiki/Metal–semiconductor_junction

    In fact, empirically, it is found that neither of the above extremes is quite correct. The choice of metal does have some effect, and there appears to be a weak correlation between the metal work function and the barrier height, however the influence of the work function is only a fraction of that predicted by the Schottky-Mott rule. [6]: 143

  4. Molybdenum ditelluride - Wikipedia

    en.wikipedia.org/wiki/Molybdenum_ditelluride

    As a lubricant molybdenum ditelluride can function well in a vacuum and at temperatures up to 500 °C with a coefficient of friction below 0.1. However molybdenum disulfide has a lower friction, and molybdenum diselenide can function at higher temperatures. [72] Related dichalcogenides can be fabricated into fairly efficient photoelectric cells ...

  5. Charge trap flash - Wikipedia

    en.wikipedia.org/wiki/Charge_trap_flash

    Toshiba in 2007 [24] and Samsung in 2009 [25] announced the development of 3D V-NAND, a means of building a standard NAND flash bit string vertically rather than horizontally to increase the number of bits in a given area of silicon. Figure 6. Vertical NAND structure. A rough idea of the cross section of this is shown in figure 6.

  6. Schottky barrier - Wikipedia

    en.wikipedia.org/wiki/Schottky_barrier

    This happens both when the semiconductor is n-type and its work function is smaller than the work function of the metal, and when the semiconductor is p-type and the opposite relation between work functions holds. [3] At the basis of the description of the Schottky barrier formation through the band diagram formalism, there are three main ...

  7. Transition metal dichalcogenide monolayers - Wikipedia

    en.wikipedia.org/wiki/Transition_metal...

    (a) Structure of a hexagonal TMD monolayer. M atoms are in black and X atoms are in yellow. (b) A hexagonal TMD monolayer seen from above. Transition-metal dichalcogenide (TMD or TMDC) monolayers are atomically thin semiconductors of the type MX 2, with M a transition-metal atom (Mo, W, etc.) and X a chalcogen atom (S, Se, or Te).

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  9. Organic semiconductor - Wikipedia

    en.wikipedia.org/wiki/Organic_semiconductor

    Combined with the fact that the structural building blocks are held together by comparatively weak van der Waals forces this precludes charge transport in delocalized valence and conduction bands. Instead, charge carriers are localized at molecular entities, e.g. oligomers or segments of a conjugated polymer chain, and move by incoherent ...