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  2. Metal-induced gap states - Wikipedia

    en.wikipedia.org/wiki/Metal-induced_gap_states

    Similarly, when a metal is deposited onto a semiconductor (by thermal evaporation, for example), the wavefunction of an electron in the semiconductor must match that of an electron in the metal at the interface. Since the Fermi levels of the two materials must match at the interface, there exists gap states that decay deeper into the semiconductor.

  3. Anderson's rule - Wikipedia

    en.wikipedia.org/wiki/Anderson's_rule

    The common anion rule guesses that, since the valence band is related to anionic states, materials with the same anions should have very small valence band offsets. [citation needed] Tersoff [5] proposed the presence of a dipole layer due to induced gap states, by analogy to the metal-induced gap states in a metal–semiconductor junction.

  4. Schottky barrier - Wikipedia

    en.wikipedia.org/wiki/Schottky_barrier

    The nature of these metal-induced gap states and their occupation by electrons tends to pin the center of the band gap to the Fermi level, an effect known as Fermi level pinning. Thus the heights of the Schottky barriers in metal–semiconductor contacts often show little dependence on the value of the semiconductor or metal work functions, in ...

  5. Oligodynamic effect - Wikipedia

    en.wikipedia.org/wiki/Oligodynamic_effect

    The oligodynamic effect (from Greek oligos, "few", and dynamis, "force") is a biocidal effect of metals, especially heavy metals, that occurs even in low concentrations. This effect is attributed to the antibacterial behavior of metal ions, which are absorbed by bacteria upon contact and damage their cell membranes. [1]

  6. Heterojunction - Wikipedia

    en.wikipedia.org/wiki/Heterojunction

    This model includes a dipole layer at the interface between the two semiconductors which arises from electron tunneling from the conduction band of one material into the gap of the other (analogous to metal-induced gap states). This model agrees well with systems where both materials are closely lattice matched [11] such as GaAs/AlGaAs.

  7. Carrier generation and recombination - Wikipedia

    en.wikipedia.org/wiki/Carrier_generation_and...

    In Shockley-Read-Hall recombination (SRH), also called trap-assisted recombination, the electron in transition between bands passes through a new energy state (localized state) created within the band gap by a dopant or a defect in the crystal lattice; such energy states are called traps. Non-radiative recombination occurs primarily at such sites.

  8. Reductive elimination - Wikipedia

    en.wikipedia.org/wiki/Reductive_elimination

    Reductive elimination is an elementary step in organometallic chemistry in which the oxidation state of the metal center decreases while forming a new covalent bond between two ligands. It is the microscopic reverse of oxidative addition , and is often the product-forming step in many catalytic processes.

  9. Intersystem crossing - Wikipedia

    en.wikipedia.org/wiki/Intersystem_crossing

    Fluorescence microscopy relies upon fluorescent compounds, or fluorophores, in order to image biological systems.Since fluorescence and phosphorescence are competitive methods of relaxation, a fluorophore that undergoes intersystem crossing to the triplet excited state no longer fluoresces and instead remains in the triplet excited state, which has a relatively long lifetime, before ...